CITATION

Tomm, Jens W. and Jiménez, Juan. Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques. US: McGraw-Hill Education, 2007.

Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques

Published:  2007

ISBN: 9780071661645 0071460322
  • Contents
  • Contributors
  • Foreword
  • Chapter 1. Introduction Jens W.Tomm and Juan Jiménez
  • References
  • Chapter 2. Overview of Laser Diode Degradation Mechanisms Juan Jiménez, Manuel Avella, Matthieu Pommies, and Pierre Picouet
  • 2.1 Introduction
  • 2.2 Laser Diode Fundamentals
  • 2.2.1 Laser structures
  • 2.3 Screening Methods
  • 2.3.1 Aging tests and enhancement factors
  • 2.3.2 Screening the bars
  • 2.3.3 Screening packaged bars
  • 2.4 Degradation Modes
  • 2.4.1 General description
  • 2.4.2 Rapid degradation
  • 2.4.3 Gradual degradation
  • 2.4.4 Catastrophic degradation
  • 2.4.5 Spatial location of the degradation
  • 2.5 Characterization Techniques
  • 2.5.1 Preview of characterization techniques
  • 2.5.2 Light-emitting techniques
  • 2.5.3 Micro-Raman
  • 2.5.4 Thermoreflectance
  • 2.5.5 Photocurrent
  • 2.5.6 Deep-level transient spectroscopy
  • 2.5.7 Electron-beam-induced current
  • 2.5.8 Transmission Electron Microscopy
  • 2.5.9 Analytic probes: AES and EDX
  • 2.6 Device Processing
  • 2.7 Facet Degradation
  • 2.7.1 COD mechanism
  • 2.7.2 Al-based lasers
  • 2.7.3 Al-free lasers
  • 2.8 Comparative Degradation among Different Lasers
  • 2.8.1 InGaAsP/InGaP
  • 2.8.2 InGaAsP/InP lasers
  • 2.8.3 AlGaAs/GaAs
  • 2.8.4 InGaAs/AlGaAs
  • 2.9 External Degradation
  • References
  • Chapter 3. Strain Measurement Jean-Pierre Landesman, Daniel T. Cassidy, Jens W.Tomm, and Mark L. Biermann
  • 3.1 General Overview of the Chapter
  • 3.2 Theory
  • 3.2.1 Overview of theory discussion
  • 3.2.2 Description of a theoretical approach: Basic details
  • 3.2.3 Quantum-confined Stark effect and excitonic effects
  • 3.2.4 Model of packaging-induced strain
  • 3.2.5 Intrinsic strain and the overall strain configuration
  • 3.2.6 Piecewise linearity of transition-energy shifts with strain
  • 3.2.7 Results of the theory
  • 3.2.8 Comparison of theory with experiment
  • 3.3 Polarized Photoluminescence (DOP, ROP)
  • 3.3.1 Introduction
  • 3.3.2 Band structure and polarization of luminescence
  • 3.3.3 DOP and strain
  • 3.3.4 ROP
  • 3.3.5 Apparatus
  • 3.3.6 Calibration constant Ce
  • 3.3.7 Measurements on lasers
  • 3.4 Micro-Photoluminescence (µ-PL)
  • 3.4.1 Introduction
  • 3.4.2 Detailed analysis of the PL line shape—experimental
  • 3.4.3 Implementation of the µ-PL technique for the measurement of packaging-induced strain profiles
  • 3.4.4 Some examples
  • 3.4.5 Summary of µ-PL
  • 3.5 Photocurrent Spectroscopy (PCS)
  • 3.5.1 Introduction
  • 3.5.2 Physics of photocurrent generation
  • 3.5.3 Instrumentation for photocurrent measurements
  • 3.5.4 Techniques related to photocurrent spectroscopy
  • 3.5.5 Strain analysis by photocurrent spectroscopy
  • 3.5.6 Defect analysis by photocurrent spectroscopy
  • 3.5.7 The interplay of strain and defects
  • 3.5.8 Summary of PCS
  • References
  • Chapter 4. Laser Facet Inspection by Imaging Techniques Stephen Bull, Eric C. Larkins, Martina Baeumler, and Juan Jiménez
  • 4.1 Photo- and Electroluminescence Microscopy and Spectroscopically Resolved Photo- and Electroluminescence Microscopy
  • 4.1.1 Photo- and electroluminescence microscopy
  • 4.1.2 Spectroscopic PLM and ELM
  • 4.2 Near-Field Observation
  • 4.2.1 Measurement of near-field patterns and spectra of individual emitters in laser bars
  • 4.2.2 Analysis of near-field patterns and emission spectra of individual emitters
  • 4.2.3 Spectral analysis of emitters to determine position and scattering strength of intracavity defects
  • 4.3 Cathodoluminescence Imaging
  • 4.3.1 Single emitters
  • 4.3.2 Laser bars
  • 4.3.3 Some hypotheses about the formation of the V defects
  • 4.3.4 Summary
  • 4.4 Conclusions
  • 4.4.1 PLM
  • 4.4.2 ELM
  • 4.4.3 CLI
  • 4.4.4 Summary
  • References
  • Chapter 5. Failure Prediction of High-Power Laser Bars Myriam Oudart, Julien Nagle, Jens W.Tomm, Eric C. Larkins, and Stephen Bull
  • 5.1 Introduction
  • 5.2 Aging of Single Emitters and Extrapolation to Bars
  • 5.2.1 Introduction to bar aging
  • 5.2.2 Single-emitter aging as a bar-characterization tool
  • 5.2.3 Influence of temperature and optical power
  • 5.2.4 Influence of stress and mounting: Extrapolation of single-emitter results to bars
  • 5.2.5 Aging signatures of particular defects
  • 5.3 Evaluation of Various Screening Methods for High-Power Laser Bars
  • 5.3.1 Stress measurement and stress impact on reliability
  • 5.3.2 Observation of defects
  • 5.3.3 The by-emitter degradation analysis method
  • 5.3.4 Examples of successful failure prediction
  • 5.4 Conclusion on Best Screening and Failure Prediction Methods
  • Acknowledgments
  • References
  • Chapter 6. Reduction of External Stresses by Improved Packaging Techniques Konstantin Boucke and Christian Scholz
  • 6.1 Design and Fabrication of High-Performance, Expansion-Matched Heat Sinks
  • 6.1.1 Materials selection and basic design rules
  • 6.1.2 Modeling of expansion-matched heat sinks
  • 6.1.3 Fabrication of WCu- and Mo-based expansion-matched heat sinks
  • 6.2 Characterization and Testing of Expansion-Matched Heat Sinks
  • 6.2.1 CTE measurement
  • 6.2.2 Thermal resistance
  • 6.2.3 Flow rate and pressure drop
  • 6.3 Reduction of the Stress Level in Expansion-Matched Packaged Laser Bars
  • References
  • Chapter 7. Degradation Modes and Related Defects in High-Power Laser Bars Jens W.Tomm, Juan Jiménez, Myriam Oudart, Julien Nagle, Eric C. Larkins, and Stephen Bull
  • 7.1 Introduction
  • 7.2 Degradation Signatures Occurring in High-Power Laser Bars
  • 7.2.1 Introduction
  • 7.2.2 Overview of severe degradation signatures
  • 7.2.3 Observation of V defects
  • 7.2.4 Observation of facet contamination
  • 7.2.5 Summary: Classification of observed degradation signatures
  • 7.3 Defect Signatures of Degradation Modes
  • 7.3.1 General remarks
  • 7.3.2 Catastrophic degradation
  • 7.3.3 Rapid degradation
  • 7.3.4 Gradual degradation
  • 7.3.5 Summary
  • 7.4 Packaging-Induced Stress and Its Evolution during Device Operation
  • 7.5 The Interplay between Stress and Defects
  • 7.5.1 Overview of microscopic defects observed
  • 7.5.2 Correlation between stresses and defects
  • 7.6 Aging Scenarios
  • 7.6.1 The observation of a strain threshold for device degradation
  • 7.6.2 The thermal runaway model for compressively strained bars
  • 7.6.3 Device degradation during low-frequency pulsed operation
  • References
  • Chapter 8. Summary Juan Jiménez and Jens W.Tomm
  • Appendix. Materials Properties Juan Jiménez, Manuel Avella, Matthieu Pommiés, and Pierre Picouet
  • Index